BZA109TS |
RFQ for BZA109TS Required Field |
 |
| Product | Manufacturers | Pack | D/C |
| BZA109TS | - | - | 98+ |
Monolithic silicon zener diode in a SOT339-1 package (SO20) for 9 bit wide undershoot/overshoot clamping, combined with fast ESD transient suppression.
Typical Application |
Features |
| · Computer and peripherals· Audio and video equipment· Communication systems· Medical equipment. | · ESD rating > 8 kV, according to IEC1000-4-2· SOT339 surface mount package· Common anode configuration· Non-clamping range 0 - 6.8 V, negative clamping range <0.5 V, positive clamping range >6.8 V. |
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| IZ | reverse current | DC; Tamb = 25 °C | - | 20 | mA |
| IF | forward current | DC; Tamb = 25 °C | - | 100 | mA |
| IFT | feed-through current | DC; Tamb = 25 °C; note 1 | - | 100 | mA |
| IFSM | peak forward current | tp = 1 ms; square wave | - | 4.5 | A |
| IZSM | peak reverse current | tp = 1 ms; square wave | - | 2.5 | A |
| Ptot | total power dissipation | Tamb = 25 °C; note 2 | - | 0.95 | W |
| Tstg | storage temperature |
-65 | +150 | °C | |
| Tj | junction temperature | -65 | +150 | °C |
